Summary:
This article discusses the need for new reliability tests for SiC-based power semiconductors and highlights the dynamic gate stress (DGS) test as an effective procedure. The DGS test is specifically designed for SiC-FETs and involves subjecting the test object to stress signals while measuring important parameters. Accurate measurement and reliable implementation of this test are essential to accurately assess the behavior and reliability of SiC semiconductors.
New Reliability Tests Required for SiC Power Semiconductors:
SiC power semiconductors have gained significant importance in the semiconductor market due to their superior properties compared to traditional silicon-based components. However, the structural differences between SiC and silicon necessitate the development of new reliability tests for SiC-based components. The existing test methods designed for silicon components are not applicable to SiC due to variations in electrical and thermal properties. Neglecting these differences can lead to undetected weaknesses that may limit the lifetime and performance of SiC components. Therefore, it is crucial to establish new, specific reliability tests for SiC-based power semiconductors.
Dynamic Gate Stress (DGS) Test: Functional Principle and Measurement Process:
The DGS test, primarily used for SiC-FETs, involves subjecting the test object to a stress signal in the form of a square wave at the gate. This stress signal is applied with defined minimum and maximum gate voltages, while actively controlling the temperature. The test enables the measurement of important parameters such as the gate threshold voltage and the R_DSon resistance. Precise measurement and proper preconditioning are critical for obtaining reliable and reproducible measurement results. The duration of stress depends on the frequency, with a recommended stress duration of at least 1011 cycles.
Assessment of DGS Measurement Results Compared with Static Measurements:
Extensive comparative tests have been conducted to assess the reliability of SiC semiconductors using the DGS test. The measurement results obtained from the DGS test were compared with static measurements to evaluate the performance and behavior of SiC components under stress. These tests aim to accurately characterize SiC semiconductors, identify any weaknesses, and improve their reliability.
In conclusion, the development of new reliability tests for SiC power semiconductors is essential due to the structural differences between SiC and silicon. The DGS test provides a reliable and effective procedure for assessing the performance and reliability of SiC components. Accurate measurement and proper implementation of this test are crucial for the continuous improvement and optimization of SiC-based power semiconductors.
The source of the article is from the blog aovotice.cz