Researchers at Hunan University, China, are pushing the boundaries of materials science by exploring doping strategies for two-dimensional (2D) semiconductors. By introducing foreign atoms into these materials, the scientists aim to enhance their electronic properties for future applications in optoelectronic devices.
Traditionally, substitutional doping with foreign elements has proven successful in modifying the electronic band structure and carrier concentration of three-dimensional (3D) monocrystalline silicon. Boron (B) and nitrogen (N) atoms, for example, have been used as acceptor and donor dopants, respectively, to increase carrier mobility in silicon.
Expanding into the realm of 2D semiconductors, molybdenum disulfide (MoS2) has emerged as a promising material for future optoelectronic devices. However, the controllable doping strategies for 2D materials and their potential applications require further exploration.
The team of researchers, led by Anlian Pan, Dong Li, and Shengman Li, has been dedicated to synthesizing large-area, high-quality, and low-defect-density 2D semiconductors. Their focus lies in understanding the photoelectric properties of these materials and their potential for future device applications.
In their latest study, the researchers experimented with doping MoS2 monolayers with vanadium (V) atoms using a chemical vapor deposition method. By varying the concentration of V atoms, they were able to fine-tune the transfer characteristics of MoS2. Interestingly, the researchers discovered that MoS2 monolayers with low concentrations of V doping exhibited enhanced B-exciton emission, indicating potential applications in broadband photodetectors.
The findings of this research, published in the journal Frontiers of Optoelectronics, provide valuable insights into the field of 2D semiconductors and their potential impact on optoelectronic technologies. Through advancements in doping strategies, scientists are paving the way for unprecedented progress in the development of next-generation optoelectronic devices.
The source of the article is from the blog elperiodicodearanjuez.es